Dmos Mosfet

Dmos Mosfet Diagram
Dmos Mosfet
Dmos Vs Mosfet

MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES. 100 Volt V DS.R DS(on) = 4Ω ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 100 0 V Continuous Drain Current at T amb=25°C I D 320 mA Pulsed Drain Current I DM 6A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 700 mW Operating.

DMOS FET does not require a base current, and can accept high current density per device area, keeping on-resistance low. The series includes a through-hole DIP-16 package, strongly demanded by the equipment market for equipment market for hobbies, amusements, and industrial fields. It also includes a HSP-16 package with a heat sink for surface.
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19N10 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 19N10

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 178 W

Предельно допустимое напряжение сток-исток |Uds|: 100 V

Предельно допустимое напряжение затвор-исток |Ugs|: 25 V

Максимально допустимый постоянный ток стока |Id|: 15.6 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 150 ns

Выходная емкость (Cd): 165 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.078 Ohm

Тип корпуса: TO-3PTO-251TO-252TO-220TO-263

19N10 Datasheet (PDF)

0.1. fqd19n10ltf fqd19n10ltm fqd19n10l fqu19n10l.pdf Size:688K _fairchild_semi

January 2009QFETFQD19N10L / FQU19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 15.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been

0.2. fqpf19n10l.pdf Size:616K _fairchild_semi

August 2000TMQFETQFETQFETQFETFQPF19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology h

0.3. fqb19n10ltm.pdf Size:611K _fairchild_semi

August 2000TMQFETQFETQFETQFETFQB19N10L / FQI19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced tec

0.4. fqb19n10tm.pdf Size:926K _fairchild_semi

October 2008QFETFQB19N10 / FQI19N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 32 pF)This advanced technology has been especially

0.5. fqpf19n10.pdf Size:581K _fairchild_semi

August 2000TMQFETQFETQFETQFETFQPF19N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 32 pF)This advanced technology has been

0.6. fqd19n10tf fqd19n10tm fqd19n10 fqu19n10.pdf Size:678K _fairchild_semi

January 2009QFETFQD19N10 / FQU19N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 15.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 32 pF)This advanced technology has been especial

0.7. fqp19n10l.pdf Size:626K _fairchild_semi

August 2000TMQFETQFETQFETQFETFQP19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has

0.8. fqp19n10.pdf Size:591K _fairchild_semi

August 2000TMQFETQFETQFETQFETFQP19N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 32 pF)This advanced technology has been es

0.9. 19n10.pdf Size:246K _utc

UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effecttransistors (MOSFET) are produced by UTCs planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance

Другие MOSFET... 2N7002ZT, UF3055, UTD3055, 12N06, 12N06Z, 15N06, 12N10, 15N20, 2SK163, 22N20, 25N06, 25N10, 30N06, 50N06, 60N06, 60N08, 6N10.

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Dmos Mosfet Diagram